? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 150 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c60a i dm t c = 25 c, pulse width limited by t jm 240 a i ar 60 a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 275 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s to-247 ad n-channel enhancement mode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 15 a 33 m ? pulse test, t 300 s, duty cycle d 2 % g = gate, d = drain, s = source, tab = drain features z international standard package jedec to-247 ad z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z high commutating dv/dt rating z fast switching times applications z switch-mode and resonant-mode power supplies z motor controls z uninterruptible power supplies (ups) z dc choppers advantages z easy to mount with 1 screw (isolated mounting screw hole) z space savings z high power density d (tab) ds99035(04/03) standard power mosfet ixth 60n15 v dss = 150 v i d (cont) = 60 a r ds(on) = 33 m ? ? ? ? ? advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixth 60n15 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 28 38 s c iss 3000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 720 pf c rss 220 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 20 ns t d(off) r g = 3.6 ? (external) 85 ns t f 18 ns q g(on) 110 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 20 nc q gd 55 nc r thjc 0.45 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 60 a i sm repetitive; pulse width limited by t jm 240 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s, v r = 100 v 150 n s q rr 2.5 c dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
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